An L-band Stacked SOI CMOS Amplifier

A 23.8-GHz SOI CMOS Tuned Amplifier

A 23.8-GHz tuned amplifier is demonstrated in a partially scaled 0.1m silicon-on-insulator CMOS technology. The fully integrated three-stage amplifier employs a common-gate, source–follower, and cascode with on-chip spiral inductors and MOS capacitors. The gain is 7.3 dB, while input and output reflection coefficients are 45 and 9.4 dB, respectively. Positive gain is exhibited beyond 26 GHz. Th...

W-Band Coverage in 32nm SOI CMOS

CMOS VCOs have been implemented for mm-wave applications [1-7], however, as the required channel bandwidth for these applications increases, widerange VCO tuning is becoming more challenging. Even without taking into account the process variability in nanometer CMOS, a single VCO hardly achieves requirements for a mm-wave band and phase-noise performance, and it suffers from the steep VCO loop ...

A W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

A CMOS Multi-band Low Noise Amplifier for WiMAX Applications

Systematic Generation of Wide Band Cmos Low-noise Amplifier Topologies

Alternative wide band Low-Noise Amplifier (LNA) topologies to be used for highly integrated CMOS transceivers are investigated. A methodology that systematically generates all the LNA topology options with 2 Voltage Controlled Current Sources (VCCS) is presented. Next to wellknown circuits such as the common gate stage and shunt series feedback common source stage, 2 alternative LNA topology ar...